STFI7N80K5 datasheet(4/14 Pages) STMICROELECTRONICS

部品番号	STFI7N80K5

部品情報	Ultra low gate charge

Download	14 Pages

Scroll/Zoom	100%

メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

Logo

4 / 14 page

Electrical characteristics

STF7N80K5, STFI7N80K5

4/14

DocID025377 Rev 1

2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 1 mA

800

V

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 800 V

VDS = 800 V, Tc=125 °C

1

50

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

±10

µA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 100 µA

3

4

5

V

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID= 3 A

0.95

1.2

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS =100 V, f=1 MHz, VGS=0

-360

-

pF

Coss

Output capacitance

-

30

-

pF

Crss

Reverse transfer

capacitance

-1

-

pF

Co(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

-47

-

pF

Co(er)

(2)

2.

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

-20

-

pF

RG

Intrinsic gate resistance

f = 1 MHz, ID=0

-

6

-

Ω

Qg

Total gate charge

VDD = 640 V, ID = 6 A

VGS =10 V

(see Figure 15)

-

13.4

-

nC

Qgs

Gate-source charge

-

3.7

-

nC

Qgd

Gate-drain charge

-

7.5

-

nC

同様の部品番号 - STFI7N80K5

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STFI7LN80K5	699Kb / 12P	N-channel 800 V, 0.95 廓 typ., 5 A MDmesh??K5 Power MOSFET in a I짼PAKFP package December 2015 Rev 1

More results

同様の説明 - STFI7N80K5

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STF9N80K5	762Kb / 16P	Ultra-low gate charge November 2015 Rev 2
STMicroelectronics	STD6N90K5	825Kb / 16P	Ultra-low gate charge November 2016 Rev 1
Infineon Technologies A...	SPD06N60C3	401Kb / 11P	Ultra low gate charge
STMicroelectronics	STF15N95K5	1Mb / 18P	Ultra low gate charge February 2014 Rev 2
	STD5N95K5	1Mb / 26P	Ultra-low gate charge January 2017 Rev 4
	STD7N90K5	817Kb / 16P	Ultra-low gate charge October 2016 Rev 1
	STP7LN80K5	719Kb / 13P	Ultra-low gate charge
	STF6N80K5	831Kb / 15P	Ultra low gate charge September 2016 Rev 4
	STL7N80K5	956Kb / 17P	Ultra low gate charge November 2013 Rev 1
	STL2N80K5	1Mb / 17P	Ultra low gate charge July 2014 Rev 2