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STF10N105K5 データシート(PDF) 3 Page - STMicroelectronics |
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STF10N105K5 データシート(HTML) 3 Page - STMicroelectronics |
3 / 18 page STF10N105K5, STP10N105K5, STW10N105K5 Electrical ratings DocID026932 Rev 2 3/18 1 Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit TO-220 TO-247 TO-220FP VGS Gate- source voltage 30 V ID Drain current (continuous) at TC = 25 °C 6 A ID Drain current (continuous) at TC = 100 °C 3.78 A IDM (1) Drain current (pulsed) 24 A PTOT Total dissipation at TC = 25 °C 130 30 W IAR Max. current during repetitive or single pulse avalanche 2 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAS, VDD = 50 V) 140 mJ dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heatsink (t = 1 s; TC = 25 ° C) 2500 V Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Notes: (1) Pulse width limited by safe operating area. (2) ISD ≤ 6 A, di/dt ≤ 100 A/µs, Vpeak ≤ V(BR)DSS. (3) VSD ≤ 840. Table 3: Thermal data Symbol Parameter Value Unit TO-220 TO-247 TO-220FP Rthj-case Thermal resistance junction-case max. 0.96 °C/W Thermal resistance junction-case max. 4.2 Rthj-amb Thermal resistance junction-ambient max. 62.50 °C/W |
同様の部品番号 - STF10N105K5 |
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同様の説明 - STF10N105K5 |
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