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STF12N120K5 データシート(PDF) 4 Page - STMicroelectronics |
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STF12N120K5 データシート(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STF12N120K5, STFW12N120K5 4/16 DocID026396 Rev 2 2 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage, (VGS= 0) ID = 1 mA 1200 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 1200 V 1 µA VDS = 1200 V, Tc=125 °C 50 µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 100 µA 3 4 5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID= 6 A 0.62 0.69 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS =100 V, f=1 MHz, VGS=0 -1370 - pF Coss Output capacitance - 110 - pF Crss Reverse transfer capacitance -0.6 - pF Co(tr) (1) 1. Time-related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance, time-related VGS = 0, VDS = 0 to 960 V -128 - pF Co(er) (2) 2. Energy-related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Equivalent capacitance, energy-related -42 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 - 3.5 - Ω Qg Total gate charge VDD = 960 V, ID = 6 A VGS =10 V (see Figure 18) - 44.2 - nC Qgs Gate-source charge - 7.3 - nC Qgd Gate-drain charge - 30 - nC |
同様の部品番号 - STF12N120K5 |
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同様の説明 - STF12N120K5 |
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