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STF18N65M2 データシート(PDF) 4 Page - STMicroelectronics |
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STF18N65M2 データシート(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STF18N65M2 4/13 DocID026877 Rev 2 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 650 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 650 V 1 µA VDS = 650 V, TC=125 °C 100 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 25 V ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 6 A 0.275 0.33 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Input capacitance VDS = 100 V, f = 1 MHz, VGS = 0 - 770 - pF Coss Output capacitance - 35 - pF Crss Reverse transfer capacitance -1.2 - pF Coss eq. (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 - 175 - pF RG Intrinsic gate resistance f = 1 MHz, ID = 0 - 6.1 - Ω Qg Total gate charge VDD = 520 V, ID = 12 A, VGS = 10 V (see Figure 15) -20 - nC Qgs Gate-source charge - 3.6 - nC Qgd Gate-drain charge - 8.5 - nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 325 V, ID = 6 A, RG = 4.7 Ω, VGS = 10 V (see Figure 14 and Figure 19) -11 - ns tr Rise time - 7.5 - ns td(off) Turn-off delay time - 46 - ns tf Fall time - 12.5 - ns |
同様の部品番号 - STF18N65M2 |
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同様の説明 - STF18N65M2 |
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