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STF6N52K3 データシート(PDF) 1 Page - STMicroelectronics |
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STF6N52K3 データシート(HTML) 1 Page - STMicroelectronics |
1 / 22 page March 2011 Doc ID 14994 Rev 2 1/22 22 STB6N52K3, STD6N52K3 STF6N52K3, STP6N52K3 N-channel 525 V, 1 Ω, 5 A, D²PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. Figure 1. Internal schematic diagram Order codes VDSS RDS(on) max ID Pw STB6N52K3 525 V < 1.2 Ω 5 A 70 W STD6N52K3 5 A(1) 1. Limited by package 25 W STF6N52K3 5 A 70 W STP6N52K3 1 3 DPAK TO-220FP 1 2 3 1 2 3 TO-220 1 3 D²PAK D(2) G(1) S(3) AM01476v1 Table 1. Device summary Order codes Marking Package Packaging STB6N52K3 6N52K3 D²PAK Tape and reel STD6N52K3 DPAK STF6N52K3 TO-220FP Tube STP6N52K3 TO-220 www.st.com |
同様の部品番号 - STF6N52K3 |
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同様の説明 - STF6N52K3 |
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