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STB100NF04T4 データシート(PDF) 1 Page - STMicroelectronics |
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STB100NF04T4 データシート(HTML) 1 Page - STMicroelectronics |
1 / 20 page November 2016 DocID9969 Rev 7 1/20 This is information on a product in full production. www.st.com STB100NF04T4, STP100NF04 Automotive-grade N- channel 40 V, 4.3 mΩ typ., 120 A STripFET™ II Power MOSFET in a D²PAK and TO-220 packages Datasheet - production data Figure 1: Internal schematic diagram Features Order code VDS RDS(on) max. ID Ptot STB100NF04T4 40 V 4.6 mΩ 120 A 300 W STP100NF04 40 V 4.6 mΩ 120 A 300 W AEC-Q101 qualified Exceptional dv/dt capability 100% avalanche tested Low gate charge Applications Switching applications Description These Power MOSFETs have been developed using ST Microelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the devices suitable for use as primary switch in advanced high-efficiency isolated DC- DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Table 1: Device summary Order code Marking Package Packing STB100NF04T4 B100NF04 D²PAK Tape and reel STP100NF04 P100NF04 TO-220 Tube 1 2 3 TAB TO-220 TAB D PAK 2 AM01475v1_Tab D(2, TAB) G(1) S(3) |
同様の部品番号 - STB100NF04T4 |
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同様の説明 - STB100NF04T4 |
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