STP100NF04 datasheet(4/20 Pages) STMICROELECTRONICS

部品番号	STP100NF04

部品情報	AEC-Q101 qualified

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Electrical characteristics

STB100NF04T4, STP100NF04

4/20

DocID9969 Rev 7

2

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown voltage

ID = 250 µA, VGS = 0 V

40

V

IDSS

Zero gate voltage drain current

VDS = 40 V, VGS = 0 V

1

µA

VDS = 40 V, VGS = 0 V

TC = 125°C(1)

10

µA

IGSS

Gate body leakage current

VGS = ±20 V, VDS = 0 V

±100

nA

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2

4

V

RDS(on)

Static drain-source on- resistance

VGS = 10 V, ID= 50 A

4.3

4.6

mΩ

Notes:

(1)Defined by design,not subject to production test

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0 V

-

5100

pF

Coss

Output capacitance

-

1300

pF

Crss

Reverse transfer capacitance

-

160

pF

Qg

Total gate charge

VDD = 32 V, ID = 120 A ,

VGS = 10 V

(see Figure 21: "Test

circuit for gate charge

behavior")

-

110

150

nC

Qgs

Gate-source charge

-

35

nC

Qgd

Gate-drain charge

-

70

nC

td(on)

Turn-on delay time

VDD = 20 V, ID = 60 A ,

RG

= 4.7 Ω ,VGS = 10 V

(see Figure 20: "Test

circuit for resistive load

switching times" and

Figure 25: "Switching

time waveform")

-

35

ns

tr

Rise time

-

220

ns

td(off)

Turn-off delay time

-

80

ns

tf

Fall time

-

50

ns

同様の部品番号 - STP100NF04

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STP100NF04	584Kb / 15P	N-CHANNEL 40V - 0.0043ohm - 120A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET
STMicroelectronics	STP100NF04	394Kb / 17P	N-channel 40V - 0.0043ohm - 120A - TO-220 - D2PAK STripFET TM II Power MOSFET
VBsemi Electronics Co.,...	STP100NF04	970Kb / 7P	N-Channel 40-V (D-S) MOSFET
STMicroelectronics	STP100NF04L	268Kb / 8P	N-CHANNEL 40V - 0.0036 ohm - 100A TO-220 STripFET??II POWER MOSFET

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