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STP7N80K5 データシート(PDF) 5 Page - STMicroelectronics |
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STP7N80K5 データシート(HTML) 5 Page - STMicroelectronics |
5 / 21 page DocID023448 Rev 5 5/21 STD7N80K5, STP7N80K5, STU7N80K5 Electrical characteristics 21 The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device's ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VDD = 400 V, ID = 3 A, RG=4.7 Ω, VGS=10 V (see Figure 19) -11.3 - ns tr Rise time 8.3 ns td(off) Turn-off delay time 23.7 ns tf Fall time 20.2 ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 6 A ISDM Source-drain current (pulsed) - 24 A VSD (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD= 6 A, VGS=0 - 1.5 V trr Reverse recovery time ISD= 6 A, VDD= 60 V di/dt = 100 A/µs, (see Figure 18) - 315 ns Qrr Reverse recovery charge - 2.8 µC IRRM Reverse recovery current - 17.5 A trr Reverse recovery time ISD= 6 A,VDD= 60 V di/dt=100 A/µs, Tj=150 °C (see Figure 18) - 480 ns Qrr Reverse recovery charge - 3.8 µC IRRM Reverse recovery current - 16 A Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max Unit V(BR)GSO Gate-source breakdown voltage IGS= ± 1mA, ID=0 30 - - V |
同様の部品番号 - STP7N80K5 |
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同様の説明 - STP7N80K5 |
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