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STD26P3LLH6 データシート(PDF) 3 Page - STMicroelectronics |
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STD26P3LLH6 データシート(HTML) 3 Page - STMicroelectronics |
3 / 16 page DocID023574 Rev 5 3/16 STD26P3LLH6 Electrical ratings 16 1 Electrical ratings Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed. Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage 30 V V GS Gate-source voltage ±20 V I D (1) 1. Limited by wire bonding. Drain current (continuous) at T C = 25 °C 12 A I D (1) Drain current (continuous) at T C = 100 °C 8.5 A I DM (1)(2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 48 A P TOT (1) Total dissipation at T C = 25 °C 40 W T stg Storage temperature -55 to 175 °C T j Max. operating junction temperature 175 °C Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 3.75 °C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit E AS Single pulse avalanche energy (starting T J =25 °C, I D =6 A, I AS =12 A, V DD =25 V, V gs =10 V) 350 mJ |
同様の部品番号 - STD26P3LLH6 |
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同様の説明 - STD26P3LLH6 |
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