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STF16N50U データシート(PDF) 3 Page - STMicroelectronics

部品番号 STF16N50U
部品情報  Gate charge minimized
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
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STF16N50U
Electrical ratings
Doc ID 17923 Rev 1
3/12
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
500
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
15 (1)
1.
Current is limited by wire features.
A
ID
Drain current (continuous) at TC = 100 °C
9 (1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
60 (1)
A
PTOT
Total dissipation at TC = 25 °C
30
W
IAR
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
11
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
250
mJ
dv/dt (3)
3.
ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS.
Peak diode recovery voltage slope
20
V/ns
VESD-(G-S) G-S EDS (HBM C=100 pF; R=1.5 kΩ)
4000
V
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case Thermal resistance junction-case max
3.29
°C/W
Rthj-amb Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C


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