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STF16N50U データシート(PDF) 3 Page - STMicroelectronics |
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STF16N50U データシート(HTML) 3 Page - STMicroelectronics |
3 / 12 page STF16N50U Electrical ratings Doc ID 17923 Rev 1 3/12 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 15 (1) 1. Current is limited by wire features. A ID Drain current (continuous) at TC = 100 °C 9 (1) A IDM (2) 2. Pulse width limited by safe operating area. Drain current (pulsed) 60 (1) A PTOT Total dissipation at TC = 25 °C 30 W IAR Avalanche current, repetitive or not- repetitive (pulse width limited by Tj max) 11 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) 250 mJ dv/dt (3) 3. ISD ≤ 11 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS. Peak diode recovery voltage slope 20 V/ns VESD-(G-S) G-S EDS (HBM C=100 pF; R=1.5 kΩ) 4000 V VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) 2500 V Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case max 3.29 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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