STFH10N60M2 datasheet(8/12 Pages) STMICROELECTRONICS

部品番号	STFH10N60M2

部品情報	Extremely low gate charge

Download	12 Pages

Scroll/Zoom	100%

メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

Logo

8 / 12 page

Test circuits

STFH10N60M2

8/12

DocID029418 Rev 3

3

Test circuits

Figure 14: Test circuit for resistive load

switching times

Figure 15: Test circuit for gate charge

behavior

Figure 16: Test circuit for inductive load

switching and diode recovery times

Figure 17: Unclamped inductive load test

circuit

Figure 18: Unclamped inductive waveform

Figure 19: Switching time waveform

同様の部品番号 - STFH10N60M2

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STFH10N60M6	552Kb / 12P	N-channel 600 V, 520 m typ., 6.4 A MDmesh M6 Power MOSFET in a TO-220FP wide creepage package May 2019 Rev 2

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STWA48N60M2	776Kb / 12P	Extremely low gate charge December 2015 Rev 1
	STL7N60M2	310Kb / 13P	Extremely low gate charge January 2015 Rev 1
	STD7N60M2	1Mb / 21P	Extremely low gate charge June 2013 Rev 1
	STB28N60M2	1Mb / 21P	Extremely low gate charge
	STD11N65M2	1Mb / 21P	Extremely low gate charge May 2014 Rev 1
	STF5N60M2	743Kb / 13P	Extremely low gate charge June 2016 Rev 2
	STF7N65M2	904Kb / 13P	Extremely low gate charge August 2014 Rev 2
	STL13N65M2	642Kb / 16P	Extremely low gate charge December 2014 Rev 1
	STL19N60M2	770Kb / 15P	Extremely low gate charge January 2016 Rev 1
	STW56N65M2	730Kb / 12P	Extremely low gate charge December 2014 Rev 1
	STB24N65M2	1Mb / 20P	Extremely low gate charge