STFI5N95K3 datasheet(5/13 Pages) STMICROELECTRONICS

部品番号	STFI5N95K3

部品情報	N-channel 950 V, 3 廓 typ., 4 A Zener-protected SuperMESH3?? Power MOSFET in I2PAKFP package

Download	13 Pages

Scroll/Zoom	100%

メーカー	STMICROELECTRONICS [STMicroelectronics]

ホームページ	http://www.st.com

Logo

5 / 13 page

DocID023624 Rev 1

5/13

STFI5N95K3

Electrical characteristics

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

td(on)

Turn-on delay time

VDD = 475 V, ID = 2 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

-17

-

ns

tr

Rise time

-

7

-

ns

td(off)

Turn-off delay time

-

32

-

ns

tf

Fall time

-

18

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ. Max. Unit

ISD

Source-drain current

-

4

A

ISDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current (pulsed)

-

16

A

VSD

(2)

2.

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 4 A, VGS = 0

-

1.6

V

trr

Reverse recovery time

ISD = 4 A, di/dt = 100 A/µs

VDD= 60 V

(see Figure 17)

-410

ns

Qrr

Reverse recovery charge

-

3.5

µC

IRRM

Reverse recovery current

-

17

A

trr

Reverse recovery time

ISD = 4 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C

(see Figure 17)

-516

ns

Qrr

Reverse recovery charge

-

4.1

µC

IRRM

Reverse recovery current

-

16

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)GSO

Gate-source breakdown

voltage

IGS= ± 1 mA, ID=0

30

-

V

同様の部品番号 - STFI5N95K3

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STFI5N80K5	723Kb / 12P	N-channel 800 V, 1.50 廓 typ., 4 A MDmesh??K5 Power MOSFET in a I짼PAKFP package May 2016

More results

同様の説明 - STFI5N95K3

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STD5N95K3	1Mb / 23P	N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3
STMicroelectronics	STF13N95K3	861Kb / 19P	N-channel 950 V, 0.68 Ohm typ., 10 A Zener-protected SuperMESH3
STATEK CORPORATION	STU3N45K3	838Kb / 14P	N-channel 450 V - 3.3 廓 typ., 1.8 A Zener-protected SuperMESH3??Power MOSFET in a IPAK package
STMicroelectronics	STF10N65K3	958Kb / 17P	N-channel 650 V, 0.75 Ohm typ., 10 A Zener-protected SuperMESH3 Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
	STD3PK50Z	740Kb / 15P	P-channel 500 V, 3 廓 typ., 2.8 A Zener-protected SuperMESH??Power MOSFET in a DPAK package
	STFI15N95K5	754Kb / 13P	N-channel 950 V, 0.41 廓 typ., 12 A MDmesh??K5 Power MOSFET in a I짼PAKFP package July 2016 Rev 1
	STF4N62K3	1Mb / 19P	N-channel 620 V, 1.7 廓 typ., 3.8 A SuperMESH3 Power MOSFET
	STFW2N105K5	866Kb / 14P	N-channel 1050 V, 6 廓 typ., 1.5 A Zener-protected SuperMESH??5 Power MOSFET in a TO-3PF package May 2014 Rev 1
	STF10N62K3	954Kb / 17P	N-channel 620 V, 0.68 廓 typ., 8.4 A SuperMESH3?
	STB10N65K3	1Mb / 21P	N-channel 650 V, 0.75 廓 typ., 10 A SuperMESH3??Power MOSFETs in D2PAK, TO-220FP, I2PAKFP and TO-220 packages August 2013 Rev 4