SI2321DS datasheet(3/5 Pages) VISHAY

部品番号	SI2321DS

部品情報	P-Channel 20-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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Si2321DS

Vishay Siliconix

New Product

Document Number: 72210

S-03986—Rev. A, 19-May-03

www.vishay.com

3

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

300

600

900

1200

04

8

12

16

20

0

2

4

6

8

10

12

0.0

0.5

1.0

1.5

2.0

2.5

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0

246

8

10

12

0

2

4

6

8

10

12

0.0

0.4

0.8

1.2

1.6

2.0

0

1

2

3

4

5

0

2468

10

0.5

0.7

0.9

1.1

1.3

1.5

- 50

- 25

0

25

50

75

100

125

150

25

_C

TC = 125_C

Crss

Coss

Ciss

VDS = 10 V

ID = 3.3 A

VGS = 4.5 V

ID = 3.3 A

VGS = 4.5 V

VGS = 2.5 V

-55

_C

1.5 V

Output Characteristics

Transfer Characteristics

Gate Charge

On-Resistance vs. Drain Current

VDS - Drain-to-Source Voltage (V)

VGS - Gate-to-Source Voltage (V)

Qg - Total Gate Charge (nC)

VDS - Drain-to-Source Voltage (V)

ID - Drain Current (A)

Capacitance

Normalized On-Resistance vs. Junction Temperature

TJ - Junction Temperature (_C)

VGS = 1.8 V

VGS = 4.5 thru 2.5 V

1.0 V

0.5 V

2 V

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