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STFILED625 データシート(PDF) 4 Page - STMicroelectronics |
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STFILED625 データシート(HTML) 4 Page - STMicroelectronics |
4 / 15 page Electrical characteristics STFILED625, STPLED625 4/15 DocID024425 Rev 1 2 Electrical characteristics (Tcase =25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 620 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 620 V VDS = 620 V, TC=125 °C 1 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V; VDS=0 ±10 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.6 4.5 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 2.1 A 1.28 1.6 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 690 52 8.5 - pF pF pF COSS eq (1) 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Equivalent output capacitance VGS = 0, VDS = 0 to 496 V 16.6 pF Rg Gate input resistance f=1 MHz open drain - 4 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 496 V, ID = 4.2 A, VGS = 10 V (see Figure 18) - 27 4 16 - nC nC nC Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off-delay time Fall time VDD = 310 V, ID = 4.2 A, RG = 4.7 Ω, VGS = 10 V (see Figure 17) - 12 8 40 21 - ns ns ns ns Obsolete Product(s) - Obsolete Product(s) |
同様の部品番号 - STFILED625 |
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同様の説明 - STFILED625 |
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