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STPLED627 データシート(PDF) 3 Page - STMicroelectronics

部品番号 STPLED627
部品情報  N-channel 620 V, 0.95typ., 7.0 A Power MOSFET in I짼PAKFP and TO-220
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPLED627 データシート(HTML) 3 Page - STMicroelectronics

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DocID025170 Rev 1
3/15
STFILED627, STPLED627
Electrical ratings
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
I²PAKFP
TO-220
VDS
Drain-source voltage
620
V
VGS
Gate-source voltage
± 30
V
ID
Drain current (continuous) at TC = 25 °C
7.0(1)
1.
Limited by maximum junction temperature.
A
ID
Drain current (continuous) at TC = 100 °C
4.0(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
22(1)
A
PTOT
Total dissipation at TC = 25 °C
30
90
W
IAR
(3)
3.
Pulse width limited by Tj max.
Avalanche current, repetitive or not-repetitive
5.5
A
EAS
(4)
4.
Starting Tj = 25 °C, ID = IAR, VDD = 50 V.
Single pulse avalanche energy
140
mJ
ESD
Gate-source human body model
(R = 1.5 k
Ω, C = 100 pF)
2.5
kV
dv/dt(5)
5.
ISD ≤ 5.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDSpeak ≤ V(BR)DSS.
Peak diode recovery voltage slope
12
V/ns
VISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t = 1 s; T
C = 25 °C)
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
I²PAKFP
TO-220
Unit
Rthj-case
Thermal resistance junction-case max.
4.17
1.39
°C/W
Rthj-amb
Thermal resistance junction-ambient max.
62.5
°C/W
Obsolete
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