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SI4832DY-T1 データシート(PDF) 4 Page - Vishay Siliconix |
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SI4832DY-T1 データシート(HTML) 4 Page - Vishay Siliconix |
4 / 5 page Si4832DY Vishay Siliconix www.vishay.com 4 Document Number: 71774 S-31062—Rev. F, 26-May-03 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 10 20 30 40 50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage Single Pulse Power (MOSFET) Normalized Thermal Transient Impedance, Junction-to-Ambient (MOSFET) Square Wave Pulse Duration (sec) VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Time (sec) 0.00 0.02 0.04 0.06 0.08 0.10 0 2468 10 2 1 0.1 0.01 10-4 10-3 10-2 10-1 10 100 600 TJ = 150_C TJ = 25_C ID = 9.0 A 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 70_C/W 3. TJM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM 50 1 0.1 10 125 150 0.0001 1 30 Reverse Current (Schottky) TJ - Junction Temperature (_C) 0 255075 100 10 V 0.001 0.01 0.1 10 20 V 30 V 600 100 10 1 0.1 0.01 1 |
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同様の説明 - SI4832DY-T1 |
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