STGF10H60DF datasheet(9/24 Pages) STMICROELECTRONICS

部品番号	STGF10H60DF

部品情報	Trench gate field-stop IGBT, H series 600 V, 10 A high speed

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DocID025111 Rev 2

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STGB10H60DF, STGF10H60DF, STGP10H60DF

Electrical characteristics

24

Figure 14. Transfer characteristics

Figure 15. Diode VF vs. forward current

IC

15

10

5

0

6

7

VGE(V)

(A)

10

20

8

9

25

TJ=175°C

30

35

TJ=-40°C

TJ=25°C

VCE=5V

GIPD281020131513FSR

VF

2.1

1.7

1.3

0.9

4

IF(A)

(V)

8

TJ= 175°C

12

16

20

TJ= 25°C

TJ= -40°C

GIPD281020131551FSR

Figure 16. Normalized VGE(th) vs junction

temperature

Figure 17. Normalized V(BR)CES vs. junction

temperature

VGE(th)

1.1

1.0

0.6

-50

TJ(°C)

(norm)

0

50

100

150

IC= 1mA

VCE= VGE

0.7

0.8

0.9

GIPD281020131600FSR

V(BR)CES

1.1

1.0

0.9

-50

TJ(°C)

(norm)

0

50

100

150

IC= 2mA

GIPD041020131502FSR

Figure 18. Capacitance variation

Figure 19. Gate charge vs. gate-emitter voltage

C

10

VCE(V)

(pF)

0.1

1

10

Cies

100

1000

Coes

Cres

GIPD281020131602FSR

VGE

8

0

Qg(nC)

(V)

020

IC= 10A

IGE= 1mA

VCC= 480V

4

40

12

60

16

GIPD281020131606FSR

同様の部品番号 - STGF10H60DF

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STGF10HF60KD	477Kb / 13P	10 A - 600 V - short-circuit rugged IGBT February 2012
STMicroelectronics	STGF10HF60KD	477Kb / 13P	10 A - 600 V - short-circuit rugged IGBT February 2012

More results

同様の説明 - STGF10H60DF

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