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STGWA15H120F2 データシート(PDF) 4 Page - STMicroelectronics |
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STGWA15H120F2 データシート(HTML) 4 Page - STMicroelectronics |
4 / 17 page Electrical characteristics STGW15H120F2, STGWA15H120F2 4/17 DocID026013 Rev 5 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)CES Collector-emitter breakdown voltage (VGE = 0) IC = 2 mA 1200 V VCE(sat) Collector-emitter saturation voltage VGE = 15 V, IC = 15 A 2.1 2.6 V VGE = 15 V, IC = 15 A TJ = 125 °C 2.4 VGE = 15 V, IC = 15 A TJ = 175 °C 2.5 VGE(th) Gate threshold voltage VCE = VGE, IC = 500 µA 5 6 7 V ICES Collector cut-off current (VGE = 0) VCE = 1200 V 25 µA IGES Gate-emitter leakage current (VCE = 0) VGE = ± 20 V ± 250 nA Table 5. Dynamic characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit Cies Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 -1300 - pF Coes Output capacitance - 105 - pF Cres Reverse transfer capacitance -32 - pF Qg Total gate charge VCC = 960 V, IC = 15 A, VGE = 15 V, see Figure 23 -67 - nC Qge Gate-emitter charge - 8 - nC Qgc Gate-collector charge - 38 - nC |
同様の部品番号 - STGWA15H120F2 |
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同様の説明 - STGWA15H120F2 |
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