STGWA40H120DF2 datasheet(4/17 Pages) STMICROELECTRONICS

部品番号	STGWA40H120DF2

部品情報	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed

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Electrical characteristics

STGW40H120DF2, STGWA40H120DF2

4/17

DocID023753 Rev 5

2

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

1200

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

2.1

2.6

V

VGE = 15 V, IC = 40 A,

TJ = 125 °C

2.4

VGE = 15 V, IC = 40 A,

TJ = 175 °C

2.5

VF

Forward on-voltage

IF = 40 A

3.9

4.9

V

IF = 40 A, TJ = 125 °C

3.05

IF = 40 A, TJ = 175 °C

2.8

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 2 mA

5

6

7

V

ICES

Collector cut-off current

VGE = 0 V, VCE = 1200 V

25

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

nA

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz,

VGE = 0 V

-

3200

-

pF

Coes

Output capacitance

-

220

-

Cres

Reverse transfer

capacitance

-

80

-

Qg

Total gate charge

VCC = 960 V, IC = 40 A,

VGE = 15 V (see Figure 30: "

Gate charge test circuit")

-

158

-

nC

Qge

Gate-emitter charge

-

17

-

Qgc

Gate-collector charge

-

85

-

同様の部品番号 - STGWA40H120DF2

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STMicroelectronics	STGWA40H120F2	1,002Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed March 2015 Rev 3

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