STGWA40S120DF3 datasheet(4/18 Pages) STMICROELECTRONICS

部品番号	STGWA40S120DF3

部品情報	Trench gate field-stop IGBT, S series 1200 V, 40 A low drop

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Electrical characteristics

STGW40S120DF3, STGWA40S120DF3

4/18

DocID026373 Rev 2

2

Electrical characteristics

TJ = 25 °C unless otherwise specified

Table 4. Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter

breakdown voltage

(VGE = 0)

IC = 2 mA

1200

V

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

1.65

2.15

V

VGE = 15 V, IC = 40 A,

TJ =125 °C

1.9

VGE = 15 V, IC = 25 A

TJ = 175 °C

2.05

VF

Forward on-voltage

IF = 40 A

2.85

3.95

V

IF = 40 A TJ = 125 °C

2.25

V

IF = 40 A TJ = 175 °C

2.1

V

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 2 mA

5

6

7

V

ICES

Collector cut-off current

(VGE = 0)

VCE = 1200 V

25

µA

IGES

Gate-emitter leakage

current (VCE = 0)

VGE = ± 20 V

250

nA

Table 5. Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE = 25 V, f = 1 MHz,

VGE =0

-2475

-

pF

Coes

Output capacitance

-

185

-

pF

Cres

Reverse transfer

capacitance

-95

-

pF

Qg

Total gate charge

VCC = 960 V, IC =40 A,

VGE = 15 V, see Figure 30

-129

-

nC

Qge

Gate-emitter charge

-

19

-

nC

Qgc

Gate-collector charge

-

68

-

nC

同様の部品番号 - STGWA40S120DF3

メーカー	部品番号	データシート	部品情報
STMicroelectronics	STGWA40H120DF2	821Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed June 2016 Rev 5
	STGWA40H120F2	1,002Kb / 17P	Trench gate field-stop IGBT, H series 1200 V, 40 A high speed March 2015 Rev 3
	STGWA40H60DLFB	871Kb / 15P	Trench gate field-stop IGBT, HB series 600 V, 40 A high speed in a TO-247 long leads package March 2017
	STGWA40H65DFB	967Kb / 17P	High speed switching series June 2016 Rev 1
	STGWA40H65FB	1Mb / 21P	Trench gate field-stop IGBT, HB series 650 V, 40 A high speed March 2017 Rev 7

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同様の説明 - STGWA40S120DF3

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