STGW80H65DFB-4 datasheet(5/16 Pages) STMICROELECTRONICS

部品番号	STGW80H65DFB-4

部品情報	Tight parameter distribution

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STGW80H65DFB-4

Electrical characteristics

DocID028076 Rev 3

5/16

Table 6: IGBT switching characteristics (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay

time

VCE = 400 V, IC = 80 A, VGE = 15 V,

RG = 10

Ω (see Figure 28: " Test circuit for

inductive load switching" )

-

75

-

ns

tr

Current rise

time

-

35

-

ns

(di/dt)on

Turn-on

current slope

-

1750

-

A/µs

td(off)

Turn-off-delay

time

-

336

-

ns

tf

Current fall

time

-

23

-

ns

Eon(1)

Turn-on

switching

energy

-

1

-

mJ

Eoff(2)

Turn-off

switching

energy

-

1.7

-

mJ

Ets

Total switching

energy

-

2.7

-

mJ

td(on)

Turn-on delay

time

VCE = 400 V, IC = 80 A, VGE = 15 V,

RG = 10

Ω TJ = 175 °C (see Figure 28: "

Test circuit for inductive load switching" )

-

66

-

ns

tr

Current rise

time

-

38

-

ns

(di/dt)on

Turn-on

current slope

-

1670

-

A/µs

td(off)

Turn-off-delay

time

-

403

-

ns

tf

Current fall

time

-

45

-

ns

Eon

Turn-on

switching

energy

-

1.5

-

mJ

Eoff

Turn-off

switching

energy

-

2.47

-

mJ

Ets

Total switching

energy

-

3.97

-

mJ

Notes:

(1)Including the reverse recovery of the diode.

(2)Including the tail of the collector current.

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