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STGW80H65DFB-4 データシート(PDF) 5 Page - STMicroelectronics |
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STGW80H65DFB-4 データシート(HTML) 5 Page - STMicroelectronics |
5 / 16 page STGW80H65DFB-4 Electrical characteristics DocID028076 Rev 3 5/16 Table 6: IGBT switching characteristics (inductive load) Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) Turn-on delay time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω (see Figure 28: " Test circuit for inductive load switching" ) - 75 - ns tr Current rise time - 35 - ns (di/dt)on Turn-on current slope - 1750 - A/µs td(off) Turn-off-delay time - 336 - ns tf Current fall time - 23 - ns Eon(1) Turn-on switching energy - 1 - mJ Eoff(2) Turn-off switching energy - 1.7 - mJ Ets Total switching energy - 2.7 - mJ td(on) Turn-on delay time VCE = 400 V, IC = 80 A, VGE = 15 V, RG = 10 Ω TJ = 175 °C (see Figure 28: " Test circuit for inductive load switching" ) - 66 - ns tr Current rise time - 38 - ns (di/dt)on Turn-on current slope - 1670 - A/µs td(off) Turn-off-delay time - 403 - ns tf Current fall time - 45 - ns Eon Turn-on switching energy - 1.5 - mJ Eoff Turn-off switching energy - 2.47 - mJ Ets Total switching energy - 3.97 - mJ Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. |
同様の部品番号 - STGW80H65DFB-4 |
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同様の説明 - STGW80H65DFB-4 |
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