STGIPQ5C60T-HL datasheet(6/26 Pages) STMICROELECTRONICS

部品番号	STGIPQ5C60T-HL

部品情報	SLLIMM??nano - 2 nd series IPM, 3-phase inverter, 5 A, 600 V short-circuit rugged IGBTs

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Electrical characteristics

STGIPQ5C60T-HL, STGIPQ5C60T-HZ

6/26

DocID026844 Rev 7

3

Electrical characteristics

TJ = 25 °C unless otherwise specified

3.1

Inverter part

Table 7: Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICES

Collector cut-off current

(VIN

= 0 “logic state”)

VCE = 550 V,

VCC = VBoot = 15 V

-

250

μA

VCE(sat)

Collector-emitter saturation

voltage

VCC = Vboot = 15 V,

VIN(1) = 0 - 5 V, IC = 5 A

-

1.7

2.15

V

VF

Diode forward voltage

VIN

= 0 “logic state”,

IC = 5 A

-

2.1

V

Notes:

(1)Applied among HINx, LINx and GND for x = U, V, W.

Table 8: Inductive load switching time and energy

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ton(1)

Turn-on time

VDD = 300 V,

VCC = Vboot = 15 V,

VIN(2) = 0 - 5 V,

IC = 5 A

(see Figure 3: "Switching

time definition")

-

280

-

ns

tc(on)(1)

Crossover time (on)

-

130

-

toff(1)

Turn-off time

-

950

-

tc(off)(1)

Crossover time (off)

-

115

-

trr

Reverse recovery time

-

94

-

Eon

Turn-on switching energy

-

110

-

µJ

Eoff

Turn-off switching energy

-

93

-

Notes:

(1)tON and tOFF include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of

IGBT itself under the internally given gate driving conditions.

(2)Applied among HINx, LINx and GND for x = U, V, W.

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