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STGW80H65DFB データシート(PDF) 9 Page - STMicroelectronics |
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STGW80H65DFB データシート(HTML) 9 Page - STMicroelectronics |
9 / 22 page DocID024366 Rev 6 9/22 STGY80H65DFB, STGW80H65DFB, STGWA80H65DFB, STGWT80H65DFB Electrical characteris- 22 Figure 20. Reverse recovery current vs. diode current slope Figure 21. Reverse recovery time vs. diode current slope = 80 A Irm 80 40 0 0 di/dt(A/μs (A) 500 1000 1500 VF= 400V, IF= 80A 2000 2500 TJ= 175°C TJ= 25°C 120 GIPD160920131550FSR trr 100 50 0 0 di/dt(A/μs (ns) 500 1000 1500 VF= 400V, IF= 80A 2000 2500 TJ= 175°C TJ= 25°C 150 200 250 300 350 GIPD160920131557FSR Figure 22. Reverse recovery charge vs. diode current slope Figure 23. Reverse recovery energy vs. diode current slope Qrr 2000 1000 0 0 di/dt(A/μs (nC) 500 1000 1500 VF= 400V, IF= 80A 2000 2500 TJ= 175°C TJ= 25°C 3000 4000 5000 6000 7000 GIPD160920131602FSR r Err 400 200 0 0 di/dt(A/μs (μJ) 500 1000 1500 VF= 400V, IF= 80A 2000 2500 TJ= 175°C TJ= 25°C 600 800 1000 1200 GIPD160920131610FSR Figure 24. Capacitance variations Figure 25. Collector current vs. switching frequency C 1000 100 10 0.1 VCE(V) (pF) 110 Cies Coes Cres 100 10000 GIPD160920131200FSR 40 60 80 100 120 110 Ic [A] f [kHz] G Ω rectangular current shape, (duty cycle=0.5, V CC = 400V, R =10 , V GE = 0/15 V, TJ =175°C) Tc=80°C Tc=100 °C 140 160 GIPD260520141426FSR |
同様の部品番号 - STGW80H65DFB |
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同様の説明 - STGW80H65DFB |
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