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STP15N60M2-EP データシート(PDF) 6 Page - STMicroelectronics |
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STP15N60M2-EP データシート(HTML) 6 Page - STMicroelectronics |
6 / 14 page Electrical characteristics STP15N60M2-EP 6/14 DocID027298 Rev 2 2.2 Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Normalized gate threshold voltage vs temperature Figure 7: Normalized V(BR)DSS vs. temperature ID 10 1 0.1 1 VDS(V) 10 (A) 10µs 1ms 100µs 0.1 Tj=150°C Tc=25°C Single pulse 10ms 100 GIPG121220141404MT CG20930 t p Z th = k R thj-C δ = t p / Ƭ 10 -5 10 -4 10 -3 10 -2 10 -2 10 -1 K 10 -1 t p(s) Ƭ δ = 0.5 δ = 0.2 δ = 0.1 δ = 0.01 δ = 0.02 δ = 0.05 SINGLE PULSE Z th = k R thj-C δ = t p / Ƭ t p Ƭ GIPG121220141416MT ID 15 5 0 0 4 VDS(V) 8 (A) 12 6V VGS=7, 8, 9, 10V 10 20 16 4V 5V GIPG121220141419MT ID 20 10 0 0 4 VGS(V) 8 (A) 2 6 5 15 VDS=17V 0.9 0.8 0.7 0.6 -75 -25 T J(°C) 1.0 25 75 125 I D = 250 µA 1.1 V GS(th) (norm) GIPG181120141615ALS GIPG191120141457ALS -75 T J(°C) -25 75 25 125 0.88 0.92 0.96 1.04 1.00 1.08 I D = 1mA V (BR)DSS (norm) |
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