データシートサーチシステム
  Japanese  ▼
ALLDATASHEET.JP

X  

STD110N02RT4G データシート(PDF) 1 Page - ON Semiconductor

部品番号 STD110N02RT4G
部品情報  Power MOSFET
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

STD110N02RT4G データシート(HTML) 1 Page - ON Semiconductor

  STD110N02RT4G Datasheet HTML 1Page - ON Semiconductor STD110N02RT4G Datasheet HTML 2Page - ON Semiconductor STD110N02RT4G Datasheet HTML 3Page - ON Semiconductor STD110N02RT4G Datasheet HTML 4Page - ON Semiconductor STD110N02RT4G Datasheet HTML 5Page - ON Semiconductor STD110N02RT4G Datasheet HTML 6Page - ON Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 11
1
Publication Order Number:
NTD110N02R/D
NTD110N02R, STD110N02R
Power MOSFET
24 V, 110 A, N−Channel DPAK
Features
Planar HD3e Process for Fast Switching Performance
Low RDS(on) to Minimize Conduction Loss
Low Ciss to Minimize Driver Loss
Low Gate Charge
Optimized for High Side Switching Requirements in
High−Efficiency DC−DC Converters
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
24
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
Thermal Resistance − Junction−to−Case
Total Power Dissipation @ TC = 25°C
Drain Current
− Continuous @ TC = 25°C, Chip
− Continuous @ TC = 25°C
Limited by Package
− Continuous @ TA = 25°C
Limited by Wires
− Single Pulse (tp = 10 ms)
RqJC
PD
ID
ID
ID
ID
1.35
110
110
110
32
110
°C/W
W
A
A
A
A
Thermal Resistance
− Junction−to−Ambient (Note 1)
− Total Power Dissipation @ TA = 25°C
− Drain Current − Continuous @ TA = 25°C
RqJA
PD
ID
52
2.88
17.5
°C/W
W
A
Thermal Resistance
− Junction−to−Ambient (Note 2)
− Total Power Dissipation @ TA = 25°C
− Drain Current − Continuous @ TA = 25°C
RqJA
PD
ID
100
1.5
12.5
°C/W
W
A
Operating and Storage Temperature Range
TJ, Tstg
− 55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
IL = 15.5 Apk, L = 1.0 mH, RG = 25 W)
EAS
120
mJ
Maximum Lead Temperature for Soldering
Purposes, (1/8
″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in drain pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
http://onsemi.com
24 V
4.1 m
W @ 10 V
RDS(on) TYP
110 A
ID MAX
V(BR)DSS
N−Channel
D
S
G
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
1
2
3
4
MARKING DIAGRAM
& PIN ASSIGNMENT
1
Gate
3
Source
2
Drain
4
Drain
A
= Assembly Location*
Y
= Year
WW
= Work Week
T110N2
= Device Code
G
= Pb−Free Package
See detailed ordering and shipping information on page 5 of
this data sheet.
ORDERING INFORMATION
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.


同様の部品番号 - STD110N02RT4G

メーカー部品番号データシート部品情報
logo
STMicroelectronics
STD110N8F6 STMICROELECTRONICS-STD110N8F6 Datasheet
632Kb / 16P
   Very low gate charge
December 2014 Rev 1
STD110NH02L STMICROELECTRONICS-STD110NH02L Datasheet
498Kb / 11P
   N-CHANNEL 24V - 0.0044 ohm - 80A DPAK STripFET??III POWER MOSFET
STD110NH02L STMICROELECTRONICS-STD110NH02L Datasheet
463Kb / 15P
   N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET
STD110NH02LT4 STMICROELECTRONICS-STD110NH02LT4 Datasheet
463Kb / 15P
   N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET
STD110NH02L STMICROELECTRONICS-STD110NH02L_06 Datasheet
463Kb / 15P
   N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET
More results

同様の説明 - STD110N02RT4G

メーカー部品番号データシート部品情報
logo
ON Semiconductor
NTP35N15G ONSEMI-NTP35N15G Datasheet
161Kb / 7P
   Power MOSFET Power MOSFET
May, 2010 ??Rev. 4
NTMS4937N ONSEMI-NTMS4937N Datasheet
142Kb / 5P
   Power MOSFET Power MOSFET
September, 2009 ??Rev. 0
logo
Fuji Electric
2SK2052-R FUJI-2SK2052-R Datasheet
146Kb / 10P
   Power MOSFET
2SK2100-01MR FUJI-2SK2100-01MR Datasheet
159Kb / 11P
   Power MOSFET
2SK1390-R FUJI-2SK1390-R Datasheet
341Kb / 10P
   Power MOSFET
2SK2849-01L FUJI-2SK2849-01L Datasheet
224Kb / 12P
   Power MOSFET
logo
International Rectifier
IRLIZ44N IRF-IRLIZ44N Datasheet
105Kb / 8P
   Power MOSFET
logo
Fuji Electric
2SK3523-01R FUJI-2SK3523-01R Datasheet
356Kb / 19P
   POWER MOSFET
2SK903 FUJI-2SK903 Datasheet
161Kb / 10P
   POWER MOSFET
logo
Torex Semiconductor
XP135A1145SR TOREX-XP135A1145SR Datasheet
66Kb / 5P
   POWER MOSFET
logo
List of Unclassifed Man...
CMT10N40 ETC1-CMT10N40 Datasheet
158Kb / 5P
   POWER MOSFET
More results


Html Pages

1 2 3 4 5 6


データシート ダウンロード

Go To PDF Page


リンク URL




プライバシーポリシー
ALLDATASHEET.JP
ALLDATASHEETはお客様のビジネスに役立ちますか?  [ DONATE ] 

Alldatasheetは   |   広告   |   お問い合わせ   |   プライバシーポリシー   |   リンク交換   |   メーカーリスト
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com