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SI4X55-C データシート(PDF) 10 Page - Silicon Laboratories |
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SI4X55-C データシート(HTML) 10 Page - Silicon Laboratories |
10 / 39 page Si4x55-C 10 Rev 1.0 Table 7. Thermal Characteristics Parameter Symbol Max Value Unit Thermal Impedance Junction to Ambient* JA 71 °C/W Junction Temperature Maximum Value* TJ 96 °C Operating Ambient Temperature Range TA –40 to +85 C Storage Temperature Range TSTG –55 to +150 C *Note: Thermal Impedance and Junction Temperature based on RF evaluation board measurements. Table 8. Absolute Maximum Ratings Parameter Value Unit VDD to GND –0.3, +3.6 V Voltage on Digital Control Inputs –0.3, VDD + 0.3 V Instantaneous VRF-peak to GND on TX Output Pin –0.3, VDD + 0.3 V Sustained VRF-peak to GND on TX Output Pin –0.3, VDD + 8.0 V Voltage on Analog Inputs –0.3, VDD + 6.5 V RX Input Power +10 dBm Note: Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The Power Amplifier may be damaged if switched on without proper load or termination connected. TX matching network design will influence TX VRF-peak on TX output pin. Caution: ESD sensitive device. |
同様の部品番号 - SI4X55-C |
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同様の説明 - SI4X55-C |
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