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SI4X55-C データシート(PDF) 10 Page - Silicon Laboratories

部品番号 SI4X55-C
部品情報  Preamble sense mode
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メーカー  SILABS [Silicon Laboratories]
ホームページ  http://www.silabs.com
Logo SILABS - Silicon Laboratories

SI4X55-C データシート(HTML) 10 Page - Silicon Laboratories

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Si4x55-C
10
Rev 1.0
Table 7. Thermal Characteristics
Parameter
Symbol
Max Value
Unit
Thermal Impedance Junction to Ambient*
JA
71
°C/W
Junction Temperature Maximum Value*
TJ
96
°C
Operating Ambient Temperature Range
TA
–40 to +85
C
Storage Temperature Range
TSTG
–55 to +150
C
*Note:
Thermal Impedance and Junction Temperature based on RF evaluation board measurements.
Table 8. Absolute Maximum Ratings
Parameter
Value
Unit
VDD to GND
–0.3, +3.6
V
Voltage on Digital Control Inputs
–0.3, VDD + 0.3
V
Instantaneous VRF-peak to GND on TX Output Pin
–0.3, VDD + 0.3
V
Sustained VRF-peak to GND on TX Output Pin
–0.3, VDD + 8.0
V
Voltage on Analog Inputs
–0.3, VDD + 6.5
V
RX Input Power
+10
dBm
Note:
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at or beyond these ratings in the operational sections of
the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability. The Power Amplifier may be damaged if switched on without proper load or termination connected.
TX matching network design will influence TX VRF-peak on TX output pin. Caution: ESD sensitive device.


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