5

LMR23625

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SNVSAH3B – DECEMBER 2015 – REVISED APRIL 2017

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Copyright © 2015–2017, Texas Instruments Incorporated

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

(2)

illustrated in Recommended Operating Conditions section.

6.4 Thermal Information

DDA (8 PINS)

UNIT

Junction-to-ambient thermal resistance

42.0

°C/W

Junction-to-top characterization parameter

5.9

Junction-to-board characterization parameter

23.4

Junction-to-case (top) thermal resistance

45.8

Junction-to-case (bottom) thermal resistance

3.6

Junction-to-board thermal resistance

23.4

6.5 Electrical Characteristics

Minimum and Maximum limits are specified through test, design or statistical correlation. Typical values represent the most

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

POWER SUPPLY (VIN PIN)

Operation input voltage

4.5

36

V

VIN_UVLO

Under voltage lockout thresholds

Rising threshold

3.4

3.7

3.9

V

Falling hysteresis

0.4

Shutdown supply current

°C to 125 °C

2.0

4.0

μA

Operating quiescent current (non-

switching)

125 °C, PFM mode

75

μA

ENABLE (EN PIN)

Enable rising threshold Voltage

1.4

1.55

1.7

V

Enable hysteresis voltage

0.4

V

Wake-up threshold

0.4

V

Input leakage current at EN pin

10

100

nA

1

μA

VOLTAGE REFERENCE (FB PIN)

Reference voltage

0.985

1.0

1.015

V

0.980

1.0

1.020

Input leakage current at FB pin

10

nA

INTERNAL LDO (VCC PIN)

Internal LDO output voltage

4.1

V

VCC_UVLO

VCC under voltage lockout thresholds

Rising threshold

2.8

3.2

3.6

V

Falling threshold

2.4

2.8

3.2

CURRENT LIMIT

Peak inductor current limit

3.6

4.8

6.2

A

Valley inductor current limit

2.8

3.5

4.6

A

Zero cross current limit

-0.04

A

Negative current limit (FPWM Option)

-2.7

-2.0

-1.3

A

INTEGRATED MOSFETS

High-side MOSFET ON-resistance

185

m

Ω

Low-side MOSFET ON-resistance

105

m

Ω

THERMAL SHUTDOWN

Thermal shutdown threshold

162

170

178

°C

Hysteresis

15

°C