SI7705DN datasheet(2/6 Pages) VISHAY

部品番号	SI7705DN

部品情報	Single P-Channel 20-V (D-S) MOSFET With Schottky Diode

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Si7705DN

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 71607

S-22520—Rev. B, 27-Jan-03

THERMAL RESISTANCE RATINGS

Parameter

Device

Symbol

Typical

Maximum

Unit

MOSFET

35

44

t

v 10 sec

Schottky

51

64

Junction-to-Ambienta

MOSFET

RthJA

75

94

_

Steady State

Schottky

91

115

_C/W

MOSFET

4

5

Junction-to-Case (Drain)

Steady State

Schottky

RthJC

10

12

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = -250 mA

-0.45

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

VDS = -16 V, VGS = 0 V

-1

m

Zero Gate Voltage Drain Current

IDSS

VDS = -16 V, VGS = 0 V, TJ = 85_C

-5

mA

On-State Drain Currenta

ID(on)

VDS v -5 V, VGS = -4.5 V

-20

A

VGS = -4.5 V, ID = -6.3 A

0.040

0.048

Drain-Source On-State Resistancea

rDS(on)

VGS = -2.5 V, ID = -5.3 A

0.054

0.068

W

DS(on)

VGS = -1.8 V, ID = -1 A

0.070

0.090

Forward Transconductancea

gfs

VDS = -10 V, ID = -6.3 A

14

S

Diode Forward Voltagea

VSD

IS = -2.3 A, VGS = 0 V

-0.8

-1.2

V

Dynamicb

Total Gate Charge

Qg

11

17

Gate-Source Charge

Qgs

VDS = -10 V, VGS = -4.5 V, ID = -6.3 A

2.7

nC

Gate-Drain Charge

Qgd

DS

GS

D

1.9

Turn-On Delay Time

td(on)

70

105

Rise Time

tr

VDD = -10 V, RL = 10 W

75

110

Turn-Off Delay Time

td(off)

VDD = -10 V, RL = 10 W

ID ^ -1 A, VGEN = -4.5 V, RG = 6 W

20

30

ns

Fall Time

tf

45

70

Notes

a.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

SCHOTTKY SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

IF = 0.5 A

0.42

0.48

Forward Voltage Drop

VF

IF = 0.5 A, TJ = 125_C

0.33

0.4

V

Vr = 20 V

0.002

0.100

Maximum Reverse Leakage Current

Irm

Vr = 20 V, TJ = 85_C

0.10

1

mA

rm

Vr = 20 V, TJ = 125_C

1.5

10

Junction Capacitance

CT

Vr = 10 V

31

pF

同様の部品番号 - SI7705DN

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	SI7703EDN	194Kb / 3P	Single P-Channel 20-V (D-S) MOSFET With Schottky Diode Rev. B, 10-Apr-06
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	SI7703EDN	582Kb / 13P	Single P-Channel 20-V (D-S) MOSFET With Schottky Diode Rev. C, 22-Dec-08

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同様の説明 - SI7705DN

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