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SMP100LC-65 データシート(PDF) 3 Page - STMicroelectronics |
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SMP100LC-65 データシート(HTML) 3 Page - STMicroelectronics |
3 / 8 page SMP100LC-xxx 3/8 100 50 %IPP t t r p 0 t Symbol Parameter Value Unit Ipp Repetitive peak pulse current: 10/1000 µs 8/20 µs 10/560 µs 5/310 µs 10/160 µs 1/20 µs 2/10 µs 100 250 120 150 200 250 500 A IFS Fail-safe mode : maximum current (note 1) 8/20 µs5 kA ITSM Non repetitive surge peak on-state current (Sinusoidal) t = 20ms t = 16.6ms t = 0.2s t=2s 55 60 25 12 A I²t I²t value for fusing t = 16.6ms t = 20ms 30 A²s TL Maximum lead temperature for soldering during 10s 260 °C Tstg Tj Storage temperature range Maximum junction temperature -55to+150 150 °C °C Note 1: in fail safe mode, the device acts as a short circuit. ABSOLUTE RATINGS (Tamb = 25°C) Type IRM @VRM max. IR @VR max. Note 1 Dynamic VBO @IBO max. max Note 2 Static VBO @IBO max. max Note 3 IH min. Note 4 C typ. Note 5 C typ. Note 6 µAV µA V V mAVmA mA pF pF SMP100LC-8 2 6 50 825 800 15 800 50 (typ) NA 75 SMP100LC-25 22 25 40 35 150 NA 65 SMP100LC-35 32 35 55 55 150 NA 55 SMP100LC-65 55 65 85 85 150 45 90 SMP100LC-90 81 90 120 125 150 40 80 SMP100LC-120 108 120 155 160 150 35 75 SMP100LC-140 120 140 185 190 150 30 65 SMP100LC-160 144 160 210 220 150 30 65 SMP100LC-200 170 200 265 275 150 30 60 SMP100LC-230 200 230 300 320 150 30 60 SMP100LC-270 230 262 350 370 150 30 60 Note 1: IR measured at VR guarantee VBR min ≥ VR Note 4: See funtional holding current test circuit 3 Note 2: See functional test circuit 1 Note 5: VR = 50V bias, VRMS=1V, F=1MHz Note 3: See test circuit 2 Note 6:VR = 2V bias, VRMS=1V, F=1MHz ELECTRICAL PARAMETERS (Tamb = 25°C) Repetitive peak pulse current tr: rise time (µs) tp: pulse duration time (µs) ex: Pulse waveform 10/1000µs tr = 10µs tp = 1000µs |
同様の部品番号 - SMP100LC-65 |
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同様の説明 - SMP100LC-65 |
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