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TPI8011NRL データシート(PDF) 2 Page - STMicroelectronics |
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TPI8011NRL データシート(HTML) 2 Page - STMicroelectronics |
2 / 9 page Characteristics TPI 2/9 1 Characteristics Figure 2. Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter Value Unit IPP Peak pulse current (see note (1)) 1. See Figure 3. 10/1000 µs 5/310 µs 2/10 µs 30 40 90 A ITSM Non repetitive surge peak on-state current (F = 50 Hz) tp = 10 ms t = 1s 8 3.5 A Tstg Tj Storage temperature range Maximum junction temperature - 55 to 150 150 °C TL Maximum lead temperature for soldering during 10 s. 260 °C Table 2. Thermal resistances Symbol Parameter Value Unit Rth(j-a) Junction to ambient 170 °C/W Table 3. Electrical characteristics (Tamb = 25 °C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VBO Breakover voltage IRM Leakage current IPP Peak pulse current IBO Breakover current IH Holding current VF Forward voltage drop C Capacitance Order code IRM @ VRM VBR @ IR VBO VBO dyn. IBO IH max. min. max. note (1) 1. See the reference test circuit 1 (Figure 5.) typ. note (2) 2. Surge test according to CCITT 1.5 kV, 10/700 µs between Tip or Ring and ground max. note (1) min. note(3) 3. See functional holding current test circuit 2 (Figure 6.) µA V V mA V V mA mA TPI8011N 10 70 80 1 110 120 800 150 TPI12011N 10 105 120 1 160 170 800 150 |
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