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TS882IST データシート(PDF) 6 Page - STMicroelectronics |
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TS882IST データシート(HTML) 6 Page - STMicroelectronics |
6 / 26 page Electrical characteristics TS882, TS884 6/26 DocID024119 Rev 3 TF Fall time (90% to 10%) CL = 30 pF, RL = 1 MΩ 110 ns TON Power-up time 1.1 1.7 ms 1. All values over the temperature range are guaranteed through correlation and simulation. No production test is performed at the temperature range limits. 2. The offset is defined as the average value of positive and negative trip points (input voltage differences requested to change the output state in each direction). 3. The hysteresis is a built-in feature of the TS882 device. It is defined as the voltage difference between the trip points. 4. Maximum values include unavoidable inaccuracies of the industrial tests. Table 4. VCC = +1.2 V, Tamb = +25 °C, VICM = VCC/2 (unless otherwise specified) (1) (continued) Symbol Parameter Test conditions Min. Typ. Max. Unit |
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同様の説明 - TS882IST |
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