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ES1JF データシート(PDF) 2 Page - Guangdong Juxing Electronics Technology Co., Ltd. |
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ES1JF データシート(HTML) 2 Page - Guangdong Juxing Electronics Technology Co., Ltd. |
2 / 3 page 50 ohm Noninductive 25Vdc approx + - D.U.T 10 ohm Noninductive NonInductive 1 ohm OSCILLOSCOPE Note 1 PULSE GENERATOR Note 2 Note:1. Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram Fig.4 Typical Characteristics Forward 1.2 1.4 Fig.5 Typical Junction Capacitance Reverse Voltage (V) 1 100 0.1 2 10 T =25 J °C f = 1.0MHz V = 50mV sig p-p 4 6 8 10 12 14 0.2 0.4 0.6 0.8 1.0 1.2 0.0 25 50 75 100 125 150 175 Lead Temperature ( °C) Fig.2 Maximum Average Forward Current Rating Single phase half wave resistive or inductive P.C.B mounted on 0.315×0. 315"(8.0 ) pad areas ×8.0mm 0.2 1.0 0.6 0 0.01 0.1 1.0 10 0.4 0.8 0.001 T =25 J °C Instaneous Forward Voltage (V) ES1JF ES1EF ES1AF Fig.3 Typical Reverse Characteristics 20 100 60 0 0.1 1.0 10 % of PIV.VOLTS 100 40 80 300 T =25 J °C T =75 J °C T =125 J °C -0.25 -1.0 0 +0.5 trr 10ns/div Set time Base for 10ns/div Characteristic Curves (TA=25 ℃ unless otherwise noted) http://www.trr-jx.com ES1AF THRU ES1JF Surface Mount Superfast Rectifiers |
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