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ACEDC3904B データシート(PDF) 1 Page - ACE Technology Co., LTD. |
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ACEDC3904B データシート(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 7 page  ACEDC3904B N-Channel Enhancement Mode Power MOSFET VER 1.1 1 Description ACEDC3904B uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features VDS=30V , ID=50A RDS(ON) @ VGS=10V, TYP 3.5mΩ RDS(ON) @ VGS=4.5V , TYP 5mΩ Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain Current (Continuous)*AC TA=25℃ ID 50 A TA=100℃ 35 Drain Current (Pulsed)*B IDM 100 A Power Dissipation TA=25℃ PD 23 W Operating temperature / storage temperature TJ/TSTG -55~150 ℃ A: The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Packaging Type PDFN3*3-8L DFN3*3-8L |
同様の部品番号 - ACEDC3904B |
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同様の説明 - ACEDC3904B |
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