データシートサーチシステム |
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2SK2225-80-E データシート(PDF) 2 Page - Renesas Technology Corp |
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2SK2225-80-E データシート(HTML) 2 Page - Renesas Technology Corp |
2 / 7 page 2SK2225-80-E R07DS1275EJ0200 Rev.2.00 Page 2 of 6 Aug 02, 2016 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Drain to source breakdown voltage V(BR)DSS 1500 — — V ID = 10 mA, VGS = 0 Gate to source leak current IGSS — — 1 A VGS = 20 V, VDS = 0 Zero gate voltage drain current IDSS — — 500 A VDS =1200 V, VGS = 0 Gate to source cutoff voltage VGS(off) 2.0 — 4.0 V ID = 1 mA, VDS = 10 V Static drain to source on state resistance RDS(on) — 9 12 ID = 1 A, VGS = 15 V Note 3 Forward transfer admittance |yfs| 0.45 0.75 — S ID = 1 A, VDS = 20 V Note 3 Input capacitance Ciss — 990 — pF VDS = 10 V, VGS = 0, f = 1 MHz Output capacitance Coss — 125 — pF Reverse transfer capacitance Crss — 60 — pF Turn-on delay time td(on) — 17 — ns ID = 1 A, VGS = 10 V, RL = 30 Rise time tr — 50 — ns Turn-off delay time td(off) — 150 — ns Fall time tf — 50 — ns Body-drain diode forward voltage VDF — 0.9 — V IF = 2 A, VGS = 0 Body-drain diode reverse recovery time trr — 1750 — ns IF = 2 A, VGS = 0, diF / dt = 100 A / s Notes: 3. Pulse Test |
同様の部品番号 - 2SK2225-80-E_16 |
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同様の説明 - 2SK2225-80-E_16 |
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