STPS61150CW datasheet(3/4 Pages) STMICROELECTRONICS

部品番号	STPS61150CW

部品情報	HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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STPS61150CW

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0

50

100

150

200

250

300

350

400

1.E-03

1.E-02

1.E-01

1.E+00

I (A)

M

IM

t

δ=0.5

t(s)

T =50°C

c

T =75°C

c

T =125°C

c

Fig. 5: Non repetitive surge peak forward current

versus overload duration (maximum values, per

diode).

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-03

1.E-02

1.E-01

1.E+00

Z/R

th(j-c)

δ = 0.5

δ = 0.2

δ = 0.1

Single pulse

T

δ=tp/T

tp

t (s)

p

Fig. 6: Relative variation of thermal impedance

junction to case versus pulse duration.

I (µA)

R

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

10

30

50

70

90

110

130

150

V (V)

R

T =125°C

j

T =150°C

j

T =100°C

j

T =50°C

j

T =25°C

j

T =75°C

j

Fig. 7: Reverse leakage current versus reverse

voltage applied (typical values, per diode).

100

1000

10000

1

10

100

1000

C(pF)

V (V)

R

F=1MHz

V

=30mV

T =25°C

OSC

RMS

j

Fig. 8: Junction capacitance versus reverse

voltage applied (typical values, per diode).

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

I

(A)

FM

V

(V)

FM

T =25°C

(maximum values)

j

T =125°C

(maximum values)

j

T =125°C

(typical values)

j

Fig. 9: Forward voltage drop versus forward

current (per diode).

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