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2SK3472 データシート(PDF) 2 Page - Toshiba Semiconductor |
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2SK3472 データシート(HTML) 2 Page - Toshiba Semiconductor |
2 / 6 page 2SK3472 2002-03-04 2 Electrical Characteristics (Tc ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±25 V, VDS = 0 V ±10 µA Drain-source breakdown voltage V (BR) GSS IG = ±10 µA, VDS = 0 V ±30 V Drain cut-OFF current IDSS VDS = 450 V, VGS = 0 V 100 µA Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 450 V Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 4.0 V Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 0.5 A 4.0 4.6 Ω Forward transfer admittance Yfs VDS = 10 V, ID = 0.5 A 0.3 0.8 S Input capacitance Ciss 180 Reverse transfer capacitance Crss 2 Output capacitance Coss VDS = 25 V, VGS = 0 V, f = 1 MHz 20 pF Rise time tr 7 Turn-ON time ton 15 Fall time tf 30 Switching time Turn-OFF time toff 70 ns Total gate charge (gate-source plus gate-drain) Qg 5 Gate-source charge Qgs 3 Gate-drain (“miller”) charge Qgd VDD ∼− 360 V, VGS = 10 V, ID = 1 A 2 nC Source-Drain Ratings and Characteristics (Tc ==== 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR 1 A Pulse drain reverse current (Note 1) IDRP 2 A Forward voltage (diode) VDSF IDR = 1 A, VGS = 0 V −1.7 V Reverse recovery time trr 350 µs Reverse recovery charge Qrr IDR = 1 A, VGS = 0 V, dIDR/dt = 100 A/µs 1.3 µC Marking Duty <= 1%, tw = 10 µs 0 V 10 V VGS RL = 400 Ω VDD ∼− 200 V ID = 0.5 A VOUT ※ Type K3472 ※ Lot Number Month (starting from alphabet A) Year (last number of the christian era) |
同様の部品番号 - 2SK3472 |
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同様の説明 - 2SK3472 |
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