SS8050-SOT23 datasheet(1/3 Pages) YFWDIODE

部品番号	SS8050-SOT23

部品情報	NPN Transistors

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Features

Collector Current: IC=1.5A

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

V

e

g

a

tl

o

V

e

s

a

B

-r

o

t

c

e

ll

o

C

CBO

40

V

Collector-Emitter Voltage

VCEO

25

V

e

g

a

tl

o

V

e

s

a

B

-r

e

tt

i

m

E

EBO

5

V

Collector Current -Continuous

IC

1.5

A

P

n

o

it

a

p

i

s

i

D

r

o

t

c

e

ll

o

C

0.3

W

T

e

r

u

t

a

r

e

p

m

e

T

n

o

it

c

n

u

J

j

150

T

e

r

u

t

a

r

e

p

m

e

T

e

g

a

r

o

t

S

stg

-55 to 150

Electrical Characteristics Ta = 25

ti

n

U

x

a

M

p

y

T

n

i

M

s

n

o

ti

i

d

n

o

c

t

s

e

T

l

o

b

m

y

S

r

e

t

e

m

a

r

a

P

Collector-base breakdown voltage

VCBO

IC = 100 uA, I E

V

0

4

0

=

Collector-emitter breakdown voltage

VCEO

IC = 1mA , IB

V

5

2

0

=

Emitter-base Breakdown voltage

VEBO

IE = 100 uA, I C

V

5

0

=

I

t

n

e

rr

u

c

ff

o

-t

u

c

e

s

a

b

-r

o

t

c

e

ll

o

C

CBO

VCB = 40 V , IE

1

.

0

=

A

Collector-emitter cut-off current

ICEO

VCE = 20 V , IB

1

0

=

A

I

t

n

e

rr

u

c

ff

o

-t

u

c

e

s

a

b

-r

e

tt

i

m

E

EBO

VEB = 5 V , IC

1

.

0

=

A

VCE = 1 V , IC = 100 mA

120

400

VCE = 1 V , IC = 800 mA

40

Collector-emitter saturation voltage

VCE(sat) IC = 800 mA , IB

V

5

.

0

A

m

0

8

=

Base-emitter saturation voltage

VBE(sat) IC = 800 mA , IB

V

2

.

1

A

m

0

8

=

f

y

c

n

e

u

q

e

rf

n

o

it

i

s

n

a

r

T

VCE = 10 V , IC = 50 mA , f = 30 MHz

100

MHz

h

n

i

a

g

t

n

e

rr

u

c

C

D

FE

hFE(1)Classification

Type

SS8050

SS8050-L

SS8050-H

SS8050-J

Range

200-350

120-200

144-202

300-400

Marking

Y1

SS8050

NPN Transistors

1

2

3

1.Base

2.Emitter

3.Collector

■

Simplified outline(SOT-23)

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