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74LVC1G58 データシート(PDF) 2 Page - NXP Semiconductors |
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74LVC1G58 データシート(HTML) 2 Page - NXP Semiconductors |
2 / 18 page 9397 750 13852 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 15 September 2004 2 of 18 Philips Semiconductors 74LVC1G58 Low-power configurable multiple function gate 3. Quick reference data [1] CPD is used to determine the dynamic power dissipation (PD in µW). PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in Volts; N = total load switching outputs; Σ(C L × VCC 2 × f o) = sum of the outputs. [2] The condition is VI = GND to VCC. 4. Ordering information 5. Marking Table 1: Quick reference data GND = 0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns. Symbol Parameter Conditions Min Typ Max Unit tPHL, tPLH propagation delay input A, B and C to output Y VCC = 1.8 V; CL =30pF; RL =1kΩ -6 -ns VCC = 2.5 V; CL =30pF; RL = 500 Ω - 3.5 - ns VCC = 2.7 V; CL =50pF; RL = 500 Ω - 4.2 - ns VCC = 3.3 V; CL =50pF; RL = 500 Ω - 3.8 - ns VCC = 5.0 V; CL =50pF; RL = 500 Ω - 3.0 - ns CI input capacitance - 2.5 - pF CPD power dissipation capacitance per buffer VCC = 3.3 V [1] [2] -20 - pF Table 2: Ordering information Type number Package Temperature range Name Description Version 74LVC1G58GW −40 °C to +125 °C SC-88 plastic surface mounted package; 6 leads SOT363 74LVC1G58GV −40 °C to +125 °C SC-74 plastic surface mounted package; 6 leads SOT457 74LVC1G58GM −40 °C to +125 °C XSON6 plastic extremely thin small outline package; no leads; 6 terminals; body 1 × 1.45 × 0.5 mm SOT886 Table 3: Marking Type number Marking code 74LVC1G58GW YK 74LVC1G58GV V58 74LVC1G58GM YK |
同様の部品番号 - 74LVC1G58 |
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同様の説明 - 74LVC1G58 |
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