SI7413DN datasheet(2/5 Pages) VISHAY

部品番号	SI7413DN

部品情報	P-Channel 20-V (D-S) MOSFET

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メーカー	VISHAY [Vishay Siliconix]

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Si7413DN

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72616

S-32519—Rev. A, 08-Dec-03

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = −400 mA

−0.4

−1.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "8 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V

−1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = −20 V, VGS = 0 V, TJ = 85_C

−5

mA

On-State Drain Currenta

ID(on)

VDS v −5 V, VGS = −4.5 V

−30

A

VGS = −4.5 V, ID = −13.2 A

0.012

0.015

Drain-Source On-State Resistancea

rDS(on)

VGS = −2.5 V, ID = −11.4 A

0.016

0.020

W

DS(on)

VGS = −1.8 V, ID = −3.5 A

0.023

0.029

Forward Transconductancea

gfs

VDS = −15 V, ID = −13.2 A

47

S

Diode Forward Voltagea

VSD

IS = −3.2 A, VGS = 0 V

−0.8

−1.2

V

Dynamicb

Total Gate Charge

Qg

34

51

Gate-Source Charge

Qgs

VDS = −10 V, VGS = −4.5 V, ID = −13.2 A

5.4

nC

Gate-Drain Charge

Qgd

8.8

Gate Resistance

Rg

f = 1 MHz

5

W

Turn-On Delay Time

td(on)

30

45

Rise Time

tr

VDD = −10 V, RL = 10 W

50

75

Turn-Off Delay Time

td(off)

VDD = −10 V, RL = 10 W

ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W

200

300

ns

Fall Time

tf

95

140

Source-Drain Reverse Recovery Time

trr

IF = −3.2 A, di/dt = 100 A/ms

35

55

Notes

a.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

5

10

15

20

25

30

0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00

0

5

10

15

20

25

30

0

1234

5

VGS = 5 thru 2 V

25_C

TC = 125_C

1 V

−55_C

1.5 V

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

同様の部品番号 - SI7413DN

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同様の説明 - SI7413DN

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