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IRF7317 データシート(PDF) 2 Page - International Rectifier |
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IRF7317 データシート(HTML) 2 Page - International Rectifier |
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2 / 10 page  IRF7317
Surface mounted on FR-4 board, t ≤ 10sec. Parameter Min. Typ. Max. Units Conditions N-Ch 20 — — VGS = 0V, ID = 250µA P-Ch -20 — — VGS = 0V, ID = -250µA N-Ch — 0.027 — Reference to 25°C, ID = 1mA P-Ch — 0.031 — Reference to 25°C, ID = -1mA — 0.023 0.029 VGS = 4.5V, ID = 6.0A — 0.030 0.046 VGS = 2.7V, ID = 5.2A — 0.049 0.058 VGS = -4.5V, ID = -2.9A — 0.082 0.098 VGS = -2.7V, ID = -1.5A N-Ch 0.7 — — VDS = VGS, ID = 250µA P-Ch -0.7 — — VDS = VGS, ID = -250µA N-Ch — 20 — VDS = 10V, ID = 6.0A P-Ch — 5.9 — VDS = -10V, ID = -1.5A N-Ch — — 1.0 VDS = 16V, VGS = 0V P-Ch — — -1.0 VDS = -16V, VGS = 0V N-Ch — — 5.0 VDS = 16V, VGS = 0V, TJ = 55°C P-Ch — — -25 VDS = -16V, VGS = 0V, TJ = 55°C IGSS Gate-to-Source Forward Leakage N-P –– — ±100 VGS = ±12V N-Ch — 18 27 P-Ch — 19 29 N-Ch — 2.2 3.3 P-Ch — 4.0 6.1 N-Ch — 6.2 9.3 P-Ch — 7.7 12 N-Ch — 8.1 12 P-Ch — 15 22 N-Ch — 17 25 P-Ch — 40 60 N-Ch — 38 57 P-Ch — 42 63 N-Ch — 31 47 P-Ch — 49 73 N-Ch — 900 — P-Ch — 780 — N-Ch — 430 — pF P-Ch — 470 — N-Ch — 200 — P-Ch — 240 — V(BR)DSS Drain-to-Source Breakdown Voltage ∆V (BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(ON) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Drain-to-Source Leakage Current Qg Total Gate Charge Qgs Gate-to-Source Charge Qgd Gate-to-Drain ("Miller") Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V V/°C Ω V S µA nC ns N-Channel ID = 6.0A, VDS = 10V, VGS = 4.5V P-Channel ID = -2.9A, VDS = -16V, VGS = -4.5V N-Channel VDD = 10V, ID = 1.0A, RG = 6.0Ω, RD = 10Ω P-Channel VDD = -10V, ID = -2.9A, RG = 6.0Ω, RD = 3.4Ω N-Channel VGS = 0V, VDS = 15V, ƒ = 1.0MHz P-Channel VGS = 0V, VDS = -15V, ƒ = 1.0MHz N-Ch P-Ch Parameter Min. Typ. Max. Units Conditions N-Ch — — 2.5 P-Ch — — -2.5 N-Ch — — 26 P-Ch — — -21 N-Ch — 0.72 1.0 TJ = 25°C, IS = 1.7A, VGS = 0V P-Ch — -0.78 -1.0 TJ = 25°C, IS = -2.9A, VGS = 0V N-Ch — 52 77 P-Ch — 47 71 N-Ch — 58 86 P-Ch — 49 73 Source-Drain Ratings and Characteristics IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge A V ns nC N-Channel TJ = 25°C, IF =1.7A, di/dt = 100A/µs P-Channel TJ = 25°C, IF = -2.9A, di/dt = 100A/µs N-Channel I SD ≤ 4.1A, di/dt ≤ 92A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C P-Channel ISD ≤ -2.9A, di/dt ≤ -77A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 22 ) Notes: Pulse width ≤ 300µs; duty cycle ≤ 2%. N-Channel Starting TJ = 25°C, L = 12mH RG = 25Ω, IAS = 4.1A. (See Figure 12) P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.9A. nA |
同様の部品番号 - IRF7317 |
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同様の説明 - IRF7317 |
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