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KA1M0880 データシート(PDF) 3 Page - Fairchild Semiconductor |
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KA1M0880 データシート(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page SPS KA1M0880 3 NOTE: Pulse test: Pulse width ≤ 300µS, duty cycle ≤ 2% ELECTRICAL CHARACTERISTICS (SFET part) (Ta=25 °C unless otherwise specified) Characteristic Symbol Test condition Min. Typ. Max. Unit Drain-source breakdown voltage BVDSS VGS=0V, ID=50µA 800 − − V Zero gate voltage drain current IDSS VDS=Max., Rating, VGS=0V − − 50 µA VDS=0.8Max., Rating, VGS=0V, TC=125°C − − 200 µA Static drain-source on resistance (note) RDS(ON) VGS=10V, ID=5.0A − 1.2 1.5 Ω Forward transconductance (note) gfs VDS=15V, ID=5.0A 1.5 2.5 − mho Input capacitance Ciss VGS=0V, VDS=25V, f=1MHz − 2460 − pF Output capacitance Coss − 210 − Reverse transfer capacitance Crss − 64 − Turn on delay time td(on) VDD=0.5BVDSS, ID=8.0A (MOSFET switching time are essentially independent of operating temperature) − − 90 nS Rise time tr − 95 200 Turn off delay time td(off) − 150 450 Fall time tf − 60 150 Total gate charge (gate-source+gate-drain) Qg VGS=10V, ID=8.0A, VDS=0.5BVDSS (MOSFET switching time are essentially independent of operating temperature) − − 150 nC Gate-source charge Qgs − 20 − Gate-drain (Miller) charge Qgd − 70 − |
同様の部品番号 - KA1M0880 |
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同様の説明 - KA1M0880 |
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