KA1M0880 datasheet(3/8 Pages) FAIRCHILD

部品番号	KA1M0880

部品情報	SPS

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メーカー	FAIRCHILD [Fairchild Semiconductor]

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3 / 8 page

SPS

KA1M0880

3

NOTE: Pulse test: Pulse width

≤ 300µS, duty cycle ≤ 2%

ELECTRICAL CHARACTERISTICS (SFET part)

(Ta=25

°C unless otherwise specified)

Characteristic

Symbol

Test condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

BVDSS

VGS=0V, ID=50µA

800

−

V

Zero gate voltage drain current

IDSS

VDS=Max., Rating, VGS=0V

−

50

µA

VDS=0.8Max., Rating,

VGS=0V, TC=125°C

−

200

µA

Static drain-source on resistance (note)

RDS(ON)

VGS=10V, ID=5.0A

−

1.2

1.5

Ω

Forward transconductance (note)

gfs

VDS=15V, ID=5.0A

1.5

2.5

−

mho

Input capacitance

Ciss

VGS=0V, VDS=25V,

f=1MHz

−

2460

−

pF

Output capacitance

Coss

−

210

−

Reverse transfer capacitance

Crss

−

64

−

Turn on delay time

td(on)

VDD=0.5BVDSS, ID=8.0A

(MOSFET switching

time are essentially

independent of

operating temperature)

−

90

nS

Rise time

tr

−

95

200

Turn off delay time

td(off)

−

150

450

Fall time

tf

−

60

150

Total gate charge

(gate-source+gate-drain)

Qg

VGS=10V, ID=8.0A,

VDS=0.5BVDSS (MOSFET

switching time are

essentially independent of

operating temperature)

−

150

nC

Gate-source charge

Qgs

−

20

−

Gate-drain (Miller) charge

Qgd

−

70

−

同様の部品番号 - KA1M0880

メーカー	部品番号	データシート	部品情報
Fairchild Semiconductor	KA1M0880	111Kb / 10P	Fairchild Power Switch(FPS)
	KA1M0880B-TU	111Kb / 10P	Fairchild Power Switch(FPS)
	KA1M0880B-TU	118Kb / 10P	Fairchild Power Switch(FPS)
	KA1M0880B-YDTU	111Kb / 10P	Fairchild Power Switch(FPS)
	KA1M0880B-YDTU	118Kb / 10P	Fairchild Power Switch(FPS)

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