BF961A datasheet(2/7 Pages) VISHAY

部品番号	BF961A

部品情報	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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Document Number 85002

Rev. 1.5, 25-Nov-04

VISHAY

BF961

Vishay Semiconductors

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

VDS = 15 V, ID = 10 mA, VG2S = 4 V, f = 1 MHz

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Parameter

Test condition

Part

Symbol

Min

Typ.

Max

Unit

Drain - source breakdown

voltage

ID = 10 µA, - VG1S = - VG2S = 4 V

V(BR)DS

20

V

Gate 1 - source breakdown

voltage

± IG1S = 10 mA, VG2S = VDS = 0

± V(BR)G1SS

814

V

Gate 2 - source breakdown

voltage

± IG2S = 10 mA, VG1S = VDS = 0

± V(BR)G2SS

814

V

Gate 1 - source leakage current ± VG1S = 5 V, VG2S = VDS = 0

± IG1SS

100

nA

Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0

± IG2SS

100

nA

Drain current

VDS = 15 V, VG1S = 0, VG2S = 4 V BF961

IDSS

420

mA

BF961A

IDSS

4

10.5

mA

BF961B

IDSS

9.5

20

mA

Gate 1 - source cut-off voltage

VDS = 15 V, VG2S = 4 V,

ID = 20 µA

- VG1S(OFF)

3.5

V

Gate 2 - source cut-off voltage

VDS = 15 V, VG1S = 0, ID = 20 µA- VG2S(OFF)

3.5

V

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward transadmittance

| y21s |12

15

mS

Gate 1 input capacitance

Cissg1

3.7

pF

Gate 2 input capacitance

VG1S = 0, VG2S = 4 V

Cissg2

1.6

pF

Feedback capacitance

Crss

25

fF

Output capacitance

Coss

1.6

pF

Power gain

GS = 2 mS, GL = 0.5 mS,

f = 200 MHz

Gps

20

dB

AGC range

VG2S = 4 to - 2 V, f = 200 MHz

∆G

ps

50

dB

Noise figure

GS = 2 mS, GL = 0.5 mS,

f = 200 MHz

F1.8

2.5

dB

Figure 1. Total Power Dissipation vs. Ambient Temperature

0

50

100

150

200

250

300

0

20

40

60

80

100 120 140 160

96 12159

Tamb - Ambient Temperature ( °C)

Figure 2. Drain Current vs. Drain Source Voltage

0

2

4

6

8

10

12

14

16

18

20

22

02468 10 12 14 16 18 20 22 24

VDS – Drain Source Voltage(V)

96 12160

VG1S = 0.6 V

0.4 V

0.2 V

0

–0.2 V

–0.4 V

–0.6 V

–0.8 V

同様の部品番号 - BF961A

メーカー	部品番号	データシート	部品情報
New Jersey Semi-Conduct...	BF961	95Kb / 2P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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