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BF961B データシート(PDF) 1 Page - Vishay Siliconix |
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BF961B データシート(HTML) 1 Page - Vishay Siliconix |
1 / 7 page BF961 Document Number 85002 Rev. 1.5, 25-Nov-04 Vishay Semiconductors www.vishay.com 1 13625 1 4 3 2 G2 G1 D S Electrostatic sensitive device. Observe precautions for handling. N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Features • Integrated gate protection diodes • High cross modulation performance • Low noise figure • High AGC-range • Low feedback capacitance • Low input capacitance Applications Input- and mixer stages especially for FM- and VHF TV-tuners up to 300 MHz. Mechanical Data Case: TO-50 Plastic case Weight: approx. 124 mg Marking: BF961 Pinning: 1 = Drain, 2 = Source, 3 = Gate 1, 4 = Gate 2 Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 µm Cu Part Ordering Ccode Marking Package BF961 BF961A or BF961B BF961 TO50 BF961A BF961A BF961 TO50 BF961B BF961B BF961 TO50 Parameter Test condition Symbol Value Unit Drain - source voltage VDS 20 V Drain current ID 30 mA Gate 1/Gate 2 - source peak current ± IG1/G2SM 10 mA Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Channel temperature TCh 150 °C Storage temperature range Tstg - 55 to + 150 °C Parameter Test condition Symbol Value Unit Channel ambient 1) RthChA 450 K/W |
同様の部品番号 - BF961B |
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同様の説明 - BF961B |
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