BF961B datasheet(1/7 Pages) VISHAY

部品番号	BF961B

部品情報	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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メーカー	VISHAY [Vishay Siliconix]

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BF961

Document Number 85002

Rev. 1.5, 25-Nov-04

Vishay Semiconductors

www.vishay.com

1

13625

1

4

3

2

G2

G1

D

S

Electrostatic sensitive device.

Observe precautions for handling.

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

Features

• Integrated gate protection diodes

• High cross modulation performance

• Low noise figure

• High AGC-range

• Low feedback capacitance

• Low input capacitance

Applications

Input- and mixer stages especially for FM- and VHF

TV-tuners up to 300 MHz.

Mechanical Data

Case: TO-50 Plastic case

Weight: approx. 124 mg

Marking: BF961

Pinning:

1 = Drain, 2 = Source,

3 = Gate 1, 4 = Gate 2

Parts Table

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Maximum Thermal Resistance

1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35

µm Cu

Part

Ordering Ccode

Marking

Package

BF961

BF961A or BF961B

BF961

TO50

BF961A

BF961

TO50

BF961B

BF961

TO50

Parameter

Test condition

Symbol

Value

Unit

Drain - source voltage

VDS

20

V

Drain current

ID

30

mA

Gate 1/Gate 2 - source peak

current

± IG1/G2SM

10

mA

Total power dissipation

Tamb ≤ 60 °C

Ptot

200

mW

Channel temperature

TCh

150

°C

Storage temperature range

Tstg

- 55 to + 150

°C

Parameter

Test condition

Symbol

Value

Unit

Channel ambient

1)

RthChA

450

K/W

同様の部品番号 - BF961B

メーカー	部品番号	データシート	部品情報
New Jersey Semi-Conduct...	BF961	95Kb / 2P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

More results

同様の説明 - BF961B

メーカー	部品番号	データシート	部品情報
Vishay Siliconix	BF994S	119Kb / 7P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF966SA	161Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.5, 15-Apr-05
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Vishay Telefunken	BF966	396Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode - Depletion Mode
Vishay Siliconix	BF964S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF988	139Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 08-Jul-99
	BF998	155Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 4, 23-Jun-99
	BF966S	127Kb / 8P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 3, 20-Jan-99
	BF998	318Kb / 10P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.8, 05-Sep-08
	BF988	157Kb / 9P	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Rev. 1.7, 11-Sep-08