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SDD60N16B データシート(PDF) 2 Page - Sirectifier Semiconductors |
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SDD60N16B データシート(HTML) 2 Page - Sirectifier Semiconductors |
2 / 4 page SDD60NXXB Diode-Diode Modules ADVANTAGES * Space and weight savings * Simple mounting * Improved temperature and power cycling * Reduced protection circuits APPLICATIONS * Supplies for DC power equipment * DC supply for PWM inverter * Field supply for DC motors * Battery DC power supplies Symbol Test Conditions Characteristic Values Unit V VF IF=200A; TVJ=25oC 1.50 VTO For power-loss calculations only 0.8 V rT 4.3 m IR TVJ=TVJM; VR=VRRM 10 mA TVJ=TVJM per diode; DC current per module RthJC 0.40 0.20 K/W per diode; DC current per module RthJK 0.60 0.30 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s2 uC QS TVJ=125oC; IF=50A; -di/dt=0.64A/us 90 IRM 11 A FEATURES * International standard package * Glass passivated chips * Isolation voltage 3600 V~ * UL file NO.310749 * RoHs compliant * Copper base plate P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: sales@sirectifier.com www.sirectifier.com |
同様の部品番号 - SDD60N16B |
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同様の説明 - SDD60N16B |
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