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CSD18511KTTT データシート(PDF) 5 Page - Texas Instruments |
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CSD18511KTTT データシート(HTML) 5 Page - Texas Instruments |
5 / 11 page VSD - Source-to-Drain Voltage (V) 0 0.2 0.4 0.6 0.8 1 0.0001 0.001 0.01 0.1 1 10 100 D009 TC = 25qC TC = 125qC TC - Case Temperature (°C) -75 -50 -25 0 25 50 75 100 125 150 175 200 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 D008 VGS = 4.5 V VGS = 10 V TC - Case Temperature (qC) -75 -50 -25 0 25 50 75 100 125 150 175 200 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 D006 VGS - Gate-to-Source Voltage (V) 0 2 4 6 8 10 12 14 16 18 20 0 1 2 3 4 5 6 7 8 9 10 D007 TC = 25°C, I D = 100 A TC = 125°C, I D = 100 A Qg - Gate Charge (nC) 0 10 20 30 40 50 60 70 0 1 2 3 4 5 6 7 8 9 10 D004 VDS - Drain-to-Source Voltage (V) 0 10 20 30 40 100 1000 10000 D005 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 5 CSD18511KTT www.ti.com SLPS684 – JULY 2017 Product Folder Links: CSD18511KTT Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated Typical MOSFET Characteristics (continued) TA = 25°C (unless otherwise stated) VDS = 20 V ID = 100 A Figure 4. Gate Charge Figure 5. Capacitance ID = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage ID = 100 A Figure 8. Normalized On-State Resistance vs Temperature Figure 9. Typical Diode Forward Voltage |
同様の部品番号 - CSD18511KTTT |
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同様の説明 - CSD18511KTTT |
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