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MTB095N10KRL3-0-T3-G データシート(PDF) 4 Page - Cystech Electonics Corp. |
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MTB095N10KRL3-0-T3-G データシート(HTML) 4 Page - Cystech Electonics Corp. |
4 / 9 page CYStech Electronics Corp. Spec. No. : C714L3 Issued Date : 2017.06.19 Revised Date : 2017.07.20 Page No. : 4/9 MTB095N10KRL3 Preliminary CYStek Product Specification Typical Characteristics Typical Output Characteristics 0 2 4 6 8 10 12 14 16 02 4 68 10 Brekdown Voltage vs Junction Temperature 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) ID=250μA, VGS=0V 10V,9V,8V,7V,6V,5V,4.5V VDS, Drain-Source Voltage(V) 4V 3.5V V =3V GS Static Drain-Source On-State resistance vs Drain Current 10 100 1000 0.01 0.1 1 10 ID, Drain Current(A) VGS=4.5V 10V Reverse Drain Current vs Source-Drain Voltage 0.2 0.4 0.6 0.8 1 1.2 02 468 IDR, Reverse Drain Current(A) Tj=25°C Tj=150°C VGS=0V Static Drain-Source On-State Resistance vs Gate-Source Voltage 0 50 100 150 200 250 300 350 02 4 6 8 10 Drain-Source On-State Resistance vs Junction Tempearture 0 0.4 0.8 1.2 1.6 2 2.4 -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) VGS=10V, ID=2A RDSON@Tj=25°C : 107mΩ typ. VGS, Gate-Source Voltage(V) ID=2A |
同様の部品番号 - MTB095N10KRL3-0-T3-G |
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同様の説明 - MTB095N10KRL3-0-T3-G |
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