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LMV8172 データシート(PDF) 2 Page - National Semiconductor (TI) |
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LMV8172 データシート(HTML) 2 Page - National Semiconductor (TI) |
2 / 6 page Absolute Maximum Ratings (Notes 1, 3) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Supply Voltage, (V S =VCC1 −VEE) 35V Flyback Peak Voltage, (V OUT −VEE) 60V (V CC2 −VEE) 60V Input Voltage, (V DC) Pins 1, 7 V EE ≤ VIN ≤ VCC1 Output Peak Current, (I O) Pin 5 (Note 8) 3.2 A pp Power Dissipation (P D) T C = 25˚C 41W T C = 90˚C 20W Above 25˚C, derate based on θ JC and TJ (Note 4) Thermal Resistance ( θ JC) 3˚C/W Junction Temperature (T JMAX) 150˚C ESD Susceptibility (Note 5) 2 kV Storage Temperature −65˚C to +80˚C Lead Temperature (Soldering 10 seconds) 265˚C Operating Ratings (Note 2) Junction Temperature Range −20˚C ≤ T J ≤ +150˚C Electrical Characteristics V CC1 = +17.5V; VCC2 = +16.9V; VEE = −17.5V; TC = 25˚C unless otherwise specified. Symbol Parameter Conditions Typical (Note 6) Limit (Note 7) Units I 2+6 Total Quiescent Current (I 2 +I6) See Figure 2 11 20 mA (max) I 1 Input Bias Current -0.5 -2.0 µA (max) I os Input Offset Current 0.5 3.0 µA (max) V 3L Pin 3 Saturation Voltage to V EE See Figure 3, I 3 = 20 mA 1.1 2.0 V (max) V 5L Output Saturation Voltage to V EE See Figure 3, I 5 = 1.2A 1.3 2.5 V (max) I 5 = 0.7A 0.7 1.4 V (max) V 5H Output Saturation Voltage to V CC2 See Figure 4, I 5 = −1.2A 2.6 3.3 V (max) I 5 = −0.7A 2.1 2.8 V (max) Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Note 2: Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may de- grade when the device is not operated under the listed test conditions. Note 3: All voltages are measured with respect to GND, unless otherwise specified. Note 4: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJMAX, θJC and the case temperature, TC. The maximum al- lowable power dissipation at any elevated temperature is PD =(TJMAX −TC)/ θJC or the number given in the Absolute Maximum Ratings, whichever is lower. For this device, TJMAX = 150˚C. The typical thermal resistance (θJC) of the LMV8172 is 3˚C/W. Note 5: Human Body model, 100 pF capacitor discharged through a 1.5 k Ω resistor. Note 6: Typicals are at TC = 25˚C and represent most likely parametric norm. Note 7: Tested limits are guaranteed to National’s AOQL (Average Outgoing Quality Level). Note 8: Maximum output current is tested with a load of 3 mH, VCC1 = +15V and VEE = −15V, VIN+ set so the device is drawing equal amounts of current from both supplies, and the sawtooth on VIN− set so the voltage waveform on pin 5 is as large as possible without distortion. www.national.com 2 |
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同様の説明 - LMV8172 |
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