2SD1047 datasheet(2/4 Pages) JIANGSU

部品番号	2SD1047

部品情報	TO-3P Plastic-Encapsulate Transistors

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メーカー	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

ホームページ	http://www.cj-elec.com/en/

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2 / 4 page

ELECTRICAL CHARACTERISTICS (Ta=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=5mA,IE=0

160

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=50mA,IB=0

140

V

Emitter-base breakdown voltage

V(BR)EBO

IE=5mA,IC=0

6

V

Collector cut-off current

ICBO

VCB=160V,IE=0

100

μA

Emitter cut-off current

IEBO

VEB=4V,IC=0

100

μA

hFE(1)

*

VCE=5V, IC=1A

60

200

DC current gain

hFE(2)

*

VCE=5V, IC=6A

20

Collector-emitter saturation voltage

VCE(sat)

*

IC=5A,IB=0.5A

2

V

Base-emitter voltage

VBE

VCE=5V, IC=1A

1.5

V

Collector output capacitance

Cob

VCB=10V,IE=0, f=1MHz

150

pF

Transition frequency

fT

*

VCE=5V,IC=1A

10

MHz

Notes: Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.

CLASSIFICATION OF hFE

RANK

D

E

RANGE

60-120

100-200

www.cj-elec.com

2

A-

2,May,2015

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