2SA1585 datasheet(1/4 Pages) JIANGSU

部品番号	2SA1585

部品情報	SOT-23 Plastic-Encapsulate Transistors

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メーカー	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

ホームページ	http://www.cj-elec.com/en/

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

2SA1585

TRANSISTOR (PNP)

FEATURES

Low VCE(sat)

Excellent DC current gain characteristics. Power dissipation

MAXIMUM RATINGS* TA=25

℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-20

V

VCEO

Collector-Emitter Voltage

-20

V

VEBO

Emitter-Base Voltage

-6

V

IC

Collector Current -Continuous

-2

A

PC

Collector Power Dissipation

350

mW

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55-150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -50µA , IE=0

-20

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1 mA ,

IB=0

-20

V

Emitter-base breakdown voltage

V(BR)EBO

IE=- 50µA, IC=0

-6

V

Collector cut-off current

ICBO

VCB=-20V ,

IE=0

-0.1

µA

Emitter cut-off current

IEBO

VEB= -5V ,

IC=0

-0.1

µA

DC current gain

hFE

VCE=-2 V,

IC= -0.1A

120

390

Collector-emitter saturation voltage

VCEsat

IC= -2A,

IB=-0.1A

-0.5

V

Transition frequency

fT

VCE=-2V,

IC=-0.5A

f=100MHz

240

MHz

CLASSIFICATION OF hFE

Rank

Q

R

Range

120-

270

180-390

Marking

R

SOT-23

JC T

1. BASE

2. EMITTER

3. COLLECTOR

www.cj-elec.com

1

A,Jun,2014

www.cj-elec.com

C,Sep,2016

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