KSB1151 datasheet(2/4 Pages) JIANGSU

部品番号	KSB1151

部品情報	TO-126 Plastic-Encapsulate Transistors

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メーカー	JIANGSU [Jiangsu Changjiang Electronics Technology Co., Ltd]

ホームページ	http://www.cj-elec.com/en/

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2 / 4 page

Parameter

Symbol

Test

conditions

Min

Typ

Max

Unit

Collector-base breakdown voltage

V(BR)CBO

IC=-100µA,IE=0

-60

V

Collector-emitter breakdown voltage

V(BR)CEO

IC=-1mA,IB=0

-60

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100µA,IC=0

-7

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-10

μA

Emitter cut-off current

IEBO

VEB=-7V,IC=0

-10

μA

hFE(1)

VCE=-1V, IC=-2A

100

400

hFE(2)

VCE=-1V, IC=-0.1A

60

DC current gain

hFE(3)

VCE=-2V, IC=-5A

50

Collector-emitter saturation voltage

VCE(sat)

IC=-2A,IB=-0.2A

-0.3

V

Base-emitter saturation voltage

VBE(sat)

IC=-2A,IB=-0.2A

-1.2

V

CLASSIFICATION OF hFE(1)

RANK

O

Y

G

RANGE

100-200

160-320

200-400

(/(&75,&$/&+$5$&7(5,67,&6

a

T =25

unless otherwise specified

www.cj-elec.com

2

D,Aug,2017

同様の部品番号 - KSB1151

メーカー	部品番号	データシート	部品情報
Samsung semiconductor	KSB1151	160Kb / 5P	PNP (LOW COLLECTOR SATURATION VOLTAGE LARGE CURRENT)
Fairchild Semiconductor	KSB1151	50Kb / 5P	Low Collector-Emitter Saturation Voltage Large Collector Current
Fairchild Semiconductor	KSB1151	55Kb / 5P	Low Collector-Emitter Saturation Voltage
Nanjing International G...	KSB1151	1Mb / 4P	TO-126 Plastic-Encapsulate Transistors
Nanjing International G...	KSB1151-TU	1Mb / 4P	TO-126 Plastic-Encapsulate Transistors

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